smd type transistors 2.3 0.60 +0.1 -0.1 6.50 +0.15 -0.15 1.50 +0.15 -0.15 0.80 +0.1 -0.1 4.60 +0.15 -0.15 0.50 +0.15 -0.15 9.70 +0.2 -0.2 5.30 +0.2 -0.2 2.30 +0.1 -0.1 0.50 +0.8 -0.7 5.55 +0.15 -0.15 2.65 +0.25 -0.1 1.50 +0.28 -0.1 0.127 max 3 .8 0 to-252 unit: mm 1 base 2 collector 3 emitter features high voltage:v cbo= -400v low saturation voltage:v ce(sat) =-1v(max.) i c =-100ma,i b =-10ma absolute maximum ratings ta = 25 parameter symbol rating unit collector-to-base voltage v cbo -400 v collector-to-emitter voltage v ceo -400 v emitter-to-base voltage v ebo -7 v collector current i c -0.5 a collector current (pulse) i cp -1 a base current i b -0.25 a collector dissipation 1 w t c =25 10 w junction temperature t j 150 storage temperature t stg -55to150 p c sales@twtysemi.com 1of 2 http://www.twtysemi.com smd type transistors 2SA1923 smd type transistors smd type product specification 4008-318-123
smd type transistors electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector cutoff current i cbo v cb =-400v, i e =0 -10 a emitter cutoff current i ebo v eb =-7v, i c =0 -1 a collector-to-emitter breakdown voltage v (br)ceo i c =-10ma, i b =0 -400 v v ce =-5v, i c =-20ma 140 450 v ce =-5v, i c =-100ma 140 400 collector-to-emitter saturation voltage v ce(sat) i c =-100ma, i b =-10ma -0.4 -1.0 v base-to-emitter saturation voltage v be(sat) i c =-100ma, i b =-10ma -0.76 -0.9 v transition frequency f t v ce =-5v, i c =-50ma 35 mhz collector output capacitance c ob v cb =-10v, f=1mhz,i e =0 18 pf switching time turn-on time ton 0.2 s switching time storage time tstg 2.3 s switching time fall time tf 0.2 s h fe dc current gain 2SA1923 sales@twtysemi.com 2 of 2 http://www.twtysemi.com smd type transistors smd type product specification 4008-318-123
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